Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10625018 | Ceramics International | 2014 | 22 Pages |
Abstract
Structural, electrical and multiferroic properties were investigated for the Bi2Fe4O9 and the Bi2Fe3.4Ti0.6O9+δ thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Both X-ray diffraction and Raman spectroscopy studies revealed that the Bi2Fe4O9 and the Bi2Fe3.4Ti0.6O9+δ thin films were crystallized in a single phase of polycrystalline orthorhombic structure. From leakage current densities and ferroelectric hysteresis loops, a low order of leakage current density of 9.23Ã10â7 A/cm2 and an enhanced remnant polarization (2Pr) of 1.5 μC/cm2 with a low coercive field of 126 kV/cm were observed for the Bi2Fe3.4Ti0.6O9+δ thin film. The Bi2Fe4O9 and the Bi2Fe3.4Ti0.6O9+δ thin films showed a weak ferromagnetism at room temperature. On comparing with a bulk ceramic form of Bi2Fe4O9, in thin film form it showed remarkably enhanced multiferroic properties.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Chinnambedu Murugesan Raghavan, Jin Won Kim, Ji Ya Choi, Jong-Woo Kim, Sang Su Kim,