Comparative study of the sintering process and thin film sputtering of AZO, GZO and AGZO ceramics targets

Experimental results showed that when co-doped by 1.5 mol% Al and 0.5 mol% Ga, the Al-Ga co-doped ZnO targets had higher maximum relative densities and lower minimum resistivities than the 2 mol% Al doped ZnO and 0.5 mol% Ga doped ZnO targets. In addition, the AGZO thin film had better electrical properties than the other two thin films. The lowest resistivity of 8.12×10−4 Ω cm was achieved on AGZO thin films deposited at 200 °C.