| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10625286 | Ceramics International | 2014 | 17 Pages |
Abstract
Highly (l00)-oriented Na0.5Bi0.5(Ti0.99Fe0.01)O3âδ (NBTFe) thin film was deposited on LaNiO3(100)/Si substrate via a chemical solution decomposition process. A high dielectric tunability of 29.36% for the NBTFe thin film is obtained at the optimum voltage (20 V) and frequency (100 kHz). The NBTFe film shows a dielectric constant of 400, dissipation factor of 0.122 and figure of merit of 4.78 at 100 kHz by the measurements of dielectric constant and dissipation factor as a function of frequency. These results demonstrate that the NBTFe thin film has a strong potential for utilization in tunable devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
H.T. Sui, C.H. Yang, G. Wang, C Feng,