Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10625337 | Ceramics International | 2014 | 5 Pages |
Abstract
Polycrystalline Cu2ZnSnS4 (CZTS) films were deposited on ITO conductive glass substrates by one-step pulsed laser deposition. The influence of laser pulse energy on the microstructure and optical properties was investigated. The results indicate that all the films are rich in Sn, poor in S and well crystallized with dominant (1Â 1Â 2) preferred orientation. At laser pulse energies of 130, 165 and 180Â mJ, SnS2 impurity phase exists in CZTS films, which is probably the reason for their larger bandgaps (1.61-1.67Â eV) compared with that of a stoichiometric CZTS film (around 1.50Â eV). While at the laser pulse energy of 150Â mJ, an attractive Cu-poor and Zn-rich, large grain size and single-phase CZTS film can be obtained. In such a film, excess Cu vacancies reduce the valence band maximum (VBM) of CZTS, leading to the blue shift of its bandgap (1.60Â eV).
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
H. He, M. Xiao, Q. Zhong, Y.C. Fu, X.M. Shen, J.M. Zeng,