Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO2-doped CaSiO3 ceramics were successfully synthesized by a solid-state method. Effects of different SnO2 additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn1−xSix)O3 (x=0.5-1.0) ceramics have been investigated. SnO2 improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn4+ substituting for Si4+ sites leads to the emergence of Ca3SnSi2O9 phase, which has a positive effect on the dielectric properties of CaO-SiO2-SnO2 materials, especially the Qf value. The Ca(Sn0.1Si0.9)O3 ceramics sintered at 1375 °C possessed good microwave dielectric properties: εr =7.92, Qf =58,000 GHz and τf=−42 ppm/°C. The Ca(Sn0.4Si0.6)O3 ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of εr=9.27, Qf=63,000 GHz, and τf=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.