Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10626524 | Ceramics International | 2005 | 4 Pages |
Abstract
Improvement in oxidation resistance of silicon carbide (SiC) with aluminum oxide (Al2O3) additions was investigated using high purity starting materials. Green compacts of SiC powders with impurity of approximately 200 ppm metal mixed with a high purity Al2O3 powder were pressureless-sintered followed by hot-isostatic pressing to a density of >99.5%. The sinterability and the strength of the SiC were similar to those from the SiC powder with impurity of 1100 ppm metal. With decreasing Al2O3 content and metallic impurity, the oxidation resistance of the SiC increased. SiC with 1.4 mass% Al2O3 content had a parabolic oxidation rate constant of 7.8 Ã 10â12 kg2 mâ4 sâ1 for 400 h oxidation at 1300 °C in dry air, which is lower than those reported for other LPS-SiC and comparable to that of CVD-SiC.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Keiichiro Suzuki, Nobuo Kageyama, Takashi Kanno,