Dielectric and microwave absorption properties of polymer derived SiCN ceramics annealed in N2 atmosphere

Porous SiCN ceramics were successfully fabricated by pyrolysis of a kind of polysilazane. The effects of annealing temperature on the microstructure evolution, direct-current electrical conductivity, dielectric properties, and microwave absorption properties of SiCN in the frequency range 8.2-12.4 GHz (X-band) were investigated. With the increase of annealing temperature, SiC, Si3N4 and free carbon nanodomains are gradually formed in the SiCN. Both the SiC and free carbon nanodomains lead to the increases of the complex relative permittivity and loss tangent of SiCN. With the increase of the annealing temperature, the average real permittivity, imaginary permittivity and loss tangent increase from 4.4, 0.2 and 0.05 to 13.8, 6.3 and 0.46, respectively. The minimum reflection coefficient and the frequency bandwidth below −10 dB for SiCN annealed at 1500 °C are −53 dB and 3.02 GHz, indicating good microwave absorption properties.