Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10629545 | Journal of the European Ceramic Society | 2014 | 6 Pages |
Abstract
To explain the sintering behavior of 5Â wt.% Sc-nitrate-added SiC, which showed a 99.3% density with the fine 156Â nm-sized grains, a microstructural study using high resolution electron microscopy (HREM) was performed and the results were compared with those of Tm-added SiC, which had a mean grain size of 753Â nm. Contact flattening was proposed as a governing sintering mechanism for Sc-added SiC based on the experimental observations of an inter-granular phase thinner than 1Â nm along with the straight grain boundaries. On the other hand, the Tm-added SiC showed a several nm-thick inter-granular phase with a curved grain boundary morphology, which is the typical microstructure that can be obtained by a solution-reprecipitation mechanism combined with Ostwald ripening.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Alfian Noviyanto, Bong-Ki Min, Hyun-Woo Yu, Dang-Hyok Yoon,