Article ID Journal Published Year Pages File Type
10631911 Materials Research Bulletin 2013 17 Pages PDF
Abstract

- Amorphous Ge20As20Se60/Ge10As30Se60 films are fabricated by pulsed laser deposition.
- Photosensitivity of the layers is studied by employing spectroscopic ellipsometry.
- As-deposited/relaxed thin films were irradiated by 593, 635, and 660 nm lasers.
- Ge20As20Se60 layers present almost zero photorefraction in relaxed state.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
Preview
Photosensitivity of pulsed laser deposited Ge20As20Se60 and Ge10As30Se60 amorphous thin films
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