| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10632045 | Materials Research Bulletin | 2005 | 8 Pages |
Abstract
We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)4, TMS] vapour was used as Silicon precursor and a bias voltage of 400Â V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of SiHn and CHn modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
S.C. Ray, T.I.T. Okpalugo, C.W. Pao, H.M. Tsai, J.W. Chiou, J.C. Jan, W.F. Pong, P. Papakonstantinou, J.A. McLaughlin, W.J. Wang,