| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10632098 | Materials Research Bulletin | 2005 | 6 Pages |
Abstract
Indium sulphide (In2S3) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In2S3 thin film. The optical band gap was found to be 2.7Â eV. The film appeared to be smooth and homogeneous from SEM study.
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Authors
H.M. Pathan, C.D. Lokhande, S.S. Kulkarni, D.P. Amalnerkar, T. Seth, Sung-Hwan Han,