Article ID Journal Published Year Pages File Type
10632199 Materials Research Bulletin 2005 6 Pages PDF
Abstract
Si nanocrystals were formed by using a Au nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created on a SiOx layer, and the luminescence peak related to Si nanocrystals was observed in the cathodoluminescence spectrum. Capacitance-voltage measurements demonstrate a metal-insulator-semiconductor behavior with a flatband voltage shift for the Al/SiO2/nanocrystalline Si/SiO2/p-Si structures, indicative of the existence of the Si nanocrystals embedded into the SiOx layer. These results indicate that Si nanocrystals embedded into the SiOx layer can be formed by using a Au island etching mask.
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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