Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10632673 | Materials Research Bulletin | 2005 | 12 Pages |
Abstract
Thin films of Bi2Se3, Bi2Se2.9Te0.1, Bi2Se2.7Te0.3 and Bi2Se2.6Te0.4 are prepared by compound evaporation. Micro structural, optical and electrical measurements are carried out on these films. X-ray diffraction pattern indicates that the as-prepared films are polycrystalline in nature with exact matching of standard pattern. The composition and morphology are determined using energy dispersive X-ray analysis and scanning electron microscopy (SEM). The optical band gap, which is direct allowed, is 0.67Â eV for Bi2Se3 thin films and the activation energy is 53Â meV. Tellurium doped thin films also show strong optical absorption corresponding to a band gap of 0.70-0.78Â eV. Absolute value of electrical conductivity in the case of tellurium doped thin film shows a decreasing trend with respect to parent structure.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Saji Augustine, S. Ampili, Jeung Ku Kang, Elizabeth Mathai,