Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10633029 | Optical Materials | 2011 | 4 Pages |
Abstract
We report, for the first time to our knowledge, the formation of single mode planar waveguide in z-cut YVO4 by 400Â keV, 500Â keV He ion implantation in fluence of 3Â ÃÂ 1016Â ions/cm2 at room temperature or at liquid nitrogen temperature (77Â K). We investigated annealing behavior of the guiding mode and near-field image in the waveguide by prism-coupling method and end-face coupling method respectively. We found that the effective refractive index of the TE0 mode was different before and after annealing for the samples implanted at room temperature, while, annealing had nearly no influence on the effective refractive index of the TE0 mode of the samples implanted at liquid nitrogen temperature (77Â K). After annealing at 600Â K for 1Â h, no guiding mode was observed in the sample implanted by 400Â keV He ion in fluence of 3Â ÃÂ 1016Â ions/cm2 at room temperature. The Rutherford backscattering/channeling technique was used to investigate the damage reduction after annealing treatments. The minimum yield of the implanted, annealed sample was 5.43%. We reconstructed the refractive index profiles in the waveguide under different condition by applying intensity calculation method.
Keywords
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Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Xiu-Hong Liu, Ke-Ming Wang, Jin-Hua Zhao, Shao-Mei Zhang, Ming Chen,