| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10633197 | Optical Materials | 2005 | 4 Pages |
Abstract
This paper reports an investigation of the three 4F3/2-4In/2 emissions of Nd3+ ions in the red and near infrared in silica gel films containing quantum dots of silicon, with comparison to those in pure silica. Measurements of excitation efficiency at various wavelengths and of PL yields as a function of the Nd concentration show that Nd is more soluble in the substoichiometric oxide obtained from triethoxysilane gels and that the energy of excitons in Si clusters is transferred to G levels of the lanthanide, with an effect of enhancement of the 4F3/2-4In/2 emissions.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
J.C. Pivin, A. Podhorodecki, R. Kudrawiec, J. Misiewicz,