Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual s

We report on the first room temperature (RT) laser operation at 1.04 μm from strained InGaAs/GaAs quantum well structures grown by metalorganic chemical vapour deposition and monolithically integrated on Si using a 6° offcut Ge/GeSi/Si virtual substrate (VS) realised by low energy-plasma enhanced chemical vapour deposition. Similar threshold current density from identical control laser diodes grown on bulk germanium substrates demonstrates the potential of Ge/GeSi/Si-VS for the monolithic integration of long wavelength GaAs-based lasers on Si. A way to reduce the crack density is also proposed to improve the laser characteristics.