Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10633672 | Optical Materials | 2005 | 4 Pages |
Abstract
Excitation of erbium photoluminescence in Si:Er epitaxial structures has been studied within a broad pump wavelength range (λex = 780-1500 nm). In all the investigated structures considerable signal of the 1.5 μm erbium photoluminescence has been observed at pump photon energies well below the silicon band-gap value (λex > 1060 nm) where seemingly no exciton generation occurs. Possible mechanism of erbium ion excitation in silicon without participation of excitons is discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
A.N. Yablonskiy, M.A.J. Klik, B.A. Andreev, V.P. Kuznetsov, Z.F. Krasilnik, T. Gregorkiewicz,