Article ID Journal Published Year Pages File Type
10633672 Optical Materials 2005 4 Pages PDF
Abstract
Excitation of erbium photoluminescence in Si:Er epitaxial structures has been studied within a broad pump wavelength range (λex = 780-1500 nm). In all the investigated structures considerable signal of the 1.5 μm erbium photoluminescence has been observed at pump photon energies well below the silicon band-gap value (λex > 1060 nm) where seemingly no exciton generation occurs. Possible mechanism of erbium ion excitation in silicon without participation of excitons is discussed.
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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