| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10633678 | Optical Materials | 2005 | 5 Pages |
Abstract
We have succeeded in enhancing the photovoltaic properties of p-n heterojunctions using β-FeSi2/Si(1 0 0) by doping Al into β-FeSi2. Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and transmission electron microscope (TEM) observations revealed that Al doping contributes to the synthesis of a less defective interface and epitaxial growth of β-FeSi2 on Si(1 0 0). This feature of epitaxial growth may reduce the recombination rate of electron-hole pairs near the depletion region, such that the photoresponse can be enhanced. We observed a significant photoelectric response corresponding to the interband transition near the band-gap energy of β-FeSi2. This effect of the Al doping can be used in IR-photoelectric cells.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Yoshihito Maeda, Yoshikazu Terai, Masaru Itakura,