Article ID Journal Published Year Pages File Type
10633679 Optical Materials 2005 4 Pages PDF
Abstract
Effects of impurity-doping on photoluminescence (PL) properties of ion-beam synthesized (IBS) β-FeSi2 have been investigated. The Al- and B-doped β-FeSi2 showed increase of both PL intensity and activation energy (Ea) for non-radiative recombination path. On the contrary, the Mn and Co doping reduced the PL intensity and Ea. We found that the doping of Al and B atoms which occupy the Si sites in β-FeSi2 is a technique to enhance the 1.54 μm photoluminescence.
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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