Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10633688 | Optical Materials | 2005 | 4 Pages |
Abstract
Single dot spectroscopy allows studying properties of a single nanocrystal avoiding inhomogeneous broadening of the emission band. Here, data obtained by this technique for Si nanocrystals fabricated by electron beam lithography, plasma etching and subsequent size-reduction by oxidation are presented. First, blinking (on-off intermittence) of the luminescence was observed for most individual nanocrystals, although some exhibited relatively stable luminescence. As a result of the quantum confinement effect spectra with different emission wavelengths for different nanocrystals were recorded. While at room temperature the full width at half-maximum of the nanocrystal emission peaks was measured to be â¼100-150Â meV, at 80Â K the linewidth for some dots appeared to be about â¼25Â meV only. The observed temperature dependence of the homogeneous linewidth may lead to an understanding of the exciton-phonon interaction in indirect band-gap quantum dots.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Ilya Sychugov, Robert Juhasz, Augustinas Galeckas, Jan Valenta, Jan Linnros,