Article ID Journal Published Year Pages File Type
10633694 Optical Materials 2005 4 Pages PDF
Abstract
We performed low temperature photoluminescence studies on nanometric thickness silicon single quantum wells. We show that electron hole recombination spectra are strongly dependent on the well thickness t and that carriers are in a strong quantum confinement regime for t ⩽ 3 nm. A set of fixed lines is identified and attributed to discrete and confined ground state levels or activated trap levels. A significant increase in the quantum efficiency is observed in the confinement regime and is associated with the progressive transformation of the Si layer into a planar distribution of two dimensional “nanoplates”.
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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