Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10633694 | Optical Materials | 2005 | 4 Pages |
Abstract
We performed low temperature photoluminescence studies on nanometric thickness silicon single quantum wells. We show that electron hole recombination spectra are strongly dependent on the well thickness t and that carriers are in a strong quantum confinement regime for t ⩽ 3 nm. A set of fixed lines is identified and attributed to discrete and confined ground state levels or activated trap levels. A significant increase in the quantum efficiency is observed in the confinement regime and is associated with the progressive transformation of the Si layer into a planar distribution of two dimensional “nanoplates”.
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Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
N. Pauc, V. Calvo, J. Eymery, F. Fournel, N. Magnea,