| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10634057 | Scripta Materialia | 2012 | 4 Pages |
Abstract
The mechanism of Al transport during Al-induced layer exchange and crystallization of amorphous Si (a-Si) has been investigated by in situ and analytical transmission electron microscopy. Significant grain boundary realignment and coarsening of Al grains close to the Si crystallization growth front as well as push up of excess Al into the a-Si layer at distances even a few micrometers away from the crystallization front were observed. Stress-mediated diffusion of Al is postulated to explain the experimental observations.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
B.I. Birajdar, T. Antesberger, B. Butz, M. Stutzmann, E. Spiecker,