Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10634076 | Scripta Materialia | 2010 | 4 Pages |
Abstract
Using in situ nanoindentation, we investigated dislocation-interface interactions in Al/Nb multilayers. Preferential storage of dislocations at interfaces, as opposed to within layers, was observed. Recovery of dislocations was observed to occur through climb in the interfaces. The rapid climb of dislocations is ascribed to high vacancy diffusivity and vacancy concentration in the interfaces. The vacancy formation energy at interfaces, 0.12Â eV, as estimated from the experimentally measured climb rates, was found to be significantly lower than in the bulk.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Nan Li, J. Wang, J.Y. Huang, A. Misra, X. Zhang,