Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10634160 | Scripta Materialia | 2005 | 5 Pages |
Abstract
A new approach to achieve a dense nanocrystalline Si array on an insulating layer was demonstrated. It was found that a single layer of nanocrystalline Si array can be formed by using KrF pulsed excimer laser irradiation on ultrathin hydrogenated amorphous silicon films (4-20Â nm) followed by thermal annealing. The area density of the nanocrystalline Si formed is as high as 1011Â cmâ2, the lateral size is around 10Â nm, and the height is about 2-4Â nm when a suitable laser irradiation fluence was used. By controlling the laser irradiation fluence and the initial a-Si:H film thickness, the grain size, density and crystallization fraction can be changed accordingly.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Jun Xu, Xin Li, Zhanhong Cen, Wei Li, Ling Xu, Zhongyuan Ma, Yunjun Rui, Xinfan Huang, Kunji Chen,