Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10634406 | Scripta Materialia | 2005 | 4 Pages |
Abstract
The effects of H on the dissociation of a screw dislocation in Ni are examined by atomistic simulations using the embedded-atom method potential. The simulations provide clear evidence that H atoms homogeneously distributed in the slip plane can increase the separation between partial dislocations and thus induce slip planarity.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
M. Wen, S. Fukuyama, K. Yokogawa,