Article ID Journal Published Year Pages File Type
10634406 Scripta Materialia 2005 4 Pages PDF
Abstract
The effects of H on the dissociation of a screw dislocation in Ni are examined by atomistic simulations using the embedded-atom method potential. The simulations provide clear evidence that H atoms homogeneously distributed in the slip plane can increase the separation between partial dislocations and thus induce slip planarity.
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
Authors
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