Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10638188 | Materials Chemistry and Physics | 2005 | 5 Pages |
Abstract
Barium strontium titanate (BST) thin-films deposited on a SiO2/Si substrate by argon ion-beam sputtering technique were annealed at 400, 500 and 600 °C in oxygen for 30 min, respectively, and were used to fabricate integrated parallel-plate capacitors by standard integrated-circuit technology. These capacitors can achieve tunability greater than 60% at an applied dc voltage of 2 V and a frequency of 100 kHz at room temperature. Considering tunability, loss factor and hysteresis effect, the BST thin-film annealed at 500 °C is superior for making tunable microwave integrated capacitors. The effects of annealing treatment in oxygen on the tuning properties of the thin-film capacitors are analyzed, and the results indicate that the tunability is strongly dependent on both oxygen vacancies and negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric interface.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Y.R. Liu, P.T. Lai, G.Q. Li, B. Li, J.B. Peng, H.B. Lo,