Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10638278 | Materials Chemistry and Physics | 2005 | 4 Pages |
Abstract
Highly (0 0 0 2) oriented ZnO thin films were synthesized on the Al/Si (1 0 0) substrates by DC reactive magnetron sputtering. X-ray diffraction (XRD), scanning electronic micro-spectra (SEM), spreading resistance profile (SRP) and second ion mass spectroscopy (SIMS) were used to determine the structural and electrical properties of ZnO/Al/Si. The results indicated that ZnO epilayers were highly c-axis oriented and that the surface of the ZnO was very clean and smooth. The Al/Si (1 0 0) substrate is a very suitable substrate for growing the ZnO thin films. There was a sharp transitional region between the ZnO thin films and Al membrane. Based on the prepared ZnO thin films, Schottky diodes were successfully fabricated by Standard IC technique. Gold Schottky contact on n-type ZnO showed â0.014 μA leakage current to 1 V reverse bias, and ideality factor is 1.5.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zhizhen Ye, Guodong Yuan, Bei Li, Liping Zhu, Binghui Zhao, Jingyun Huang,