Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10638457 | Materials Chemistry and Physics | 2005 | 7 Pages |
Abstract
The deliberate addition of Hg in CdSe thin film have been carried out using a simple, modified, chemical bath deposition technique with the objective to study the effect of Hg doping on properties of CdSe thin films. Synthesis was initiated at 278Â K temperature using complexed cadmium sulphate, mercuric nitrate and sodium selenosulphate in an aqueous ammonical medium at pH 10. Films were characterized by XRD, SEM, optical absorption, electrical and thermoelectric techniques. The 'as deposited' films were uniform, well adherent, nearly stoichiometric and polycrystalline in a single cubic phase (zinc blende). Crystallite size determined from XRD and SEM was found to increase slightly with addition of Hg. The optical band gap of CdSe remains constant upto 0.05Â mol% Hg doping, while it decreases monotonically with further increase in mercury content. Dark dc electrical resistivity and conduction activation energy of CdSe were found to decrease initially upto 0.05Â mol% of Hg, thereafter increased for higher values of Hg but remains less than those of CdSe. All the films showed n-type of conductivity. A CdSe film containing 0.05Â mol% of Hg showed higher absorption coefficient, and conductivity.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
V.M. Bhuse,