| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10639872 | Materials Science and Engineering: B | 2013 | 5 Pages |
Abstract
- InGaN quantum dots grown between AlGaN barriers using metal organic vapour phase epitaxy.
- Dot size distribution is more homogenous than for dots grown on GaN.
- Inhomogeneities observed in the barrier composition.
- Temperature dependence of the dot emission may be influenced by these inhomogeneities.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Rachel A. Oliver, Haitham A.R. El-Ella, Daniel P. Collins, Benjamin Reid, Yucheng Zhang, Fiona Christie, Menno J. Kappers, Robert A. Taylor,