Article ID Journal Published Year Pages File Type
10639875 Materials Science and Engineering: B 2013 6 Pages PDF
Abstract
Low frequency (LF) output conductance dispersion analysis based on the Gain-Phase versus frequency biased in the saturation zone for Vds < Vkink (where In is supposed to be inactive) is used to analyse the indium-related levels in nMOSFETs.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Analysis of the relationship between the kink effect and the indium levels in MOS transistors
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