Article ID Journal Published Year Pages File Type
10639880 Materials Science and Engineering: B 2013 9 Pages PDF
Abstract
► The superlattice approach permits the growth of size-controlled Si QDs in SiO2 and Si3N4. ► Photoluminescence measurements show quantum confinement of Si QDs in SiO2 matrix. ► Maximum Voc of an Si QD device is 518 mV so far.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Silicon nanocrystals produced by solid phase crystallisation of superlattices for photovoltaic applications
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