Transient photocurrents as a spatially resolved probe of carrier transport and defect distributions in silicon thin films

Article ID	Journal	Published Year	Pages	File Type
10639883	Materials Science and Engineering: B	2013	6 Pages	PDF

Abstract

âº Transient photocurrents were measured in amorphous and microcrystalline silicon. âº The electronic density of states was calculated from photocurrent transients. âº A computer model confirmed depth-dependence with laser pulse wavelength. âº In amorphous silicon light-soaking modifies the electronic defect profile. âº In microcrystalline silicon a seed layer modifies growth correlated to defect density.

Keywords

Amorphous silicon Microcrystalline silicon defects Photoconductivity

Related Topics

Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials

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Transient photocurrents as a spatially resolved probe of carrier transport and defect distributions in silicon thin films

Authors

Steve Reynolds, Rudi Brüggemann, Björn Grootoonk, Vlad Smirnov,