Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10639885 | Materials Science and Engineering: B | 2013 | 6 Pages |
Abstract
⺠We investigate the properties of phosphorus and boron-doped silicon nitride films. ⺠Phosphorus-doped layers yield higher lifetimes than undoped ones. ⺠The fixed charges density decreases when increasing the films phosphorus content. ⺠Boron-doped films feature very low lifetimes. ⺠These doped layers are of particular interest for crystalline silicon solar cells.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
B. Paviet-Salomon, S. Gall, A. Slaoui,