| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10639887 | Materials Science and Engineering: B | 2013 | 6 Pages |
Abstract
⺠We relate the open circuit voltage and the band-bending in crystalline silicon. ⺠We calculate the band-bending in the crystalline part of a silicon heterojunction. ⺠The band-bending is strongly influenced by the work function and density of states. ⺠A high defect density in the amorphous silicon emitter increases the band bending. ⺠A high defect density reduces the impact of the contact on the open circuit voltage.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
R. Varache, J.P. Kleider, M.E. Gueunier-Farret, L. Korte,