| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10639891 | Materials Science and Engineering: B | 2013 | 7 Pages |
Abstract
⺠Silicon carbide and silicon rich carbide films are prepared by PECVD. ⺠Annealing at 1100 °C promotes Si nanocrystal formation in SiC. ⺠A parasitic SiOxCy compound is formed on the surface during annealing. ⺠The surface affects optical and electrical properties of the nanocrystal layer. ⺠We analyze a fabrication sequence that minimizes oxidation. ⺠The resulting surface is SiC-rich.
Related Topics
Physical Sciences and Engineering
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Authors
M. Canino, C. Summonte, M. Allegrezza, Rimpy Shukla, I.P. Jain, M. Bellettato, A. Desalvo, F. Mancarella, M. Sanmartin, A. Terrasi, P. Löper, M. Schnabel, S. Janz,