| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10639894 | Materials Science and Engineering: B | 2013 | 6 Pages |
Abstract
⺠We study the structural, optical and electrical properties of SixC1âx/SiC multilayers with different Si excess. ⺠Multilayer structure is destroyed after annealing at 1100 °C. ⺠Energy filtered TEM confirmed the Si NC formation. ⺠Sample thickness values from optical simulations are in agreement with TEM observations. ⺠The crystallization degree of the NCs was evaluated by Raman scattering and R&T techniques. ⺠The system conductivity depends on the NC size. ⺠The presence of a defective oxycarbide layer on top did not allow for obtaining useful electrical information.
Related Topics
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Authors
J. López-Vidrier, S. Hernández, J. Samà , M. Canino, M. Allegrezza, M. Bellettato, R. Shukla, M. Schnabel, P. Löper, L. López-Conesa, S. Estradé, F. Peiró, S. Janz, B. Garrido,