| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10639898 | Materials Science and Engineering: B | 2013 | 5 Pages |
Abstract
⺠We have employed a LiF dielectric layer as a new back-contact electrode. ⺠Increasing LiF thickness will decrease barrier for electrons transport, thus yield Jsc. ⺠Increasing LiF thickness will reduced shunt leakage and enhanced internal field, thus yield Voc. ⺠Employing LiF layer, improvement of performance of HIT solar cells up to 17.13%.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Sunbo Kim, Jaehyeong Lee, Vinh Ai Dao, Seungho Lee, Nagarajan Balaji, Shihyun Ahn, Shahzada Qamar Hussain, Sangmyeong Han, Junhee Jung, Juyeon Jang, Yunjung Lee, Junsin Yi,