Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10639936 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
We report a low-temperature photoluminescence spectra (LTPL) of GaAs1âxNx layers and two-dimension electron gas (2DEG) GaAs1âxNx/AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N]Â =Â 2Â ÃÂ 1018Â cmâ3. At low temperature, PL spectra of GaAs1âxNx layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs1âxNx/AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55Â meV is deduced by photoluminescence measurements in the 10-300Â K range for a laser power excitation PÂ =Â 6Â W/cm2.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A. Hamdouni, F. Bousbih, S. Ben Bouzid, M. Oueslati, R. Chtourou, J.C. Harmand,