Article ID Journal Published Year Pages File Type
10639958 Materials Science and Engineering: B 2005 4 Pages PDF
Abstract
Scanning electron microscopy images showed that the surface morphologies of in situ annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy were mirror-like with no indication of pinholes. Selected area electron diffraction patterns and high-resolution transmission electron microscopy images of the as-grown and the in situ annealed Hg0.7Cd0.3Te epilayers showed that the microstructural properties of the Hg0.7Cd0.3Te epilayers were improved by annealing. Hall-effect measurements showed that n-Hg0.7Cd0.3Te epilayers were converted to p-Hg0.7Cd0.3Te epilayers by in situ annealing and that the carrier concentration and the mobility of the Hg0.7Cd0.3Te epilayers were dramatically changed by varying the annealing temperature and Hg-cell fluxes. These results indicate that the microstructural and the electrical properties of Hg1−xCdxTe epilayers can be significantly affected by the in situ annealing conditions.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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