Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10639966 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
SrBi2Nb2O9 (SBN) is an attractive ferroelectric material that is being considered in non-volatile random access memory cells. This study reports the effects of doping SBN at the Bi sites by the rare earth element Sm in the concentration range corresponding to x = 0-1 in the formula of SrBi2âxSmxNb2O9. A solid-state double sintering method is adopted to synthesize and sinter the compounds starting from raw materials. It is shown that the crystal structure of SBN is retained but with slight changes to the lattice parameter. The sintered density, electric polarization and magnetization are enhanced by Sm addition. This system could be considered ferroelectromagnetic in nature.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A. Srinivas, F.Y.C. Boey, T. Sritharan,