Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10639988 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
The photoluminescence (PL) excited with 514.5 nm light of the (GeS2)80(Ga2S3)20 glassy host doped with Er at low temperatures from 4.2 to 300 K has been studied. It has been found that the PL efficiency is maximum at 1.22 at.% Er and considerably increases by temperature decreasing down to 4.2 K and excitation power increasing till 200 mW cmâ2. The PL emission band from Er3+ state at around 1538 nm, attributed to the 4I15/2 â 4I13/2 transition, has been characterized by deconvoluting the experimental spectra. The intensity variation of the obtained subbands at 1538 ± 1, 1547 ± 2 and 1575 ± 7 nm with Er content and temperature has been specified and the extracted fine features have been evaluated with a view to enhanced PL efficiency.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Z.G. Ivanova, R. Ganesan, Z. Aneva, E.S.R. Gopal,