Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10639998 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
AlxGa1âxN/GaN p-i-n UV sensors grown by metal organic chemical vapor deposition (MOCVD) were fabricated for the UV-B (280-320 nm) detection. With a proper structure design by including a thin top p-layer and a graded AlxGa1âxN (x = 0.26 â 0.13) layer, the etching pit density (EPD) and the specific contact resistance of top p-layer can be significantly decreased. Device dark current density decreased from 3.5 Ã 10â7 to 2.49 Ã 10â11 A/cm2 at â3V and the spectrum responsivity at 310 nm UV-B range is 0.04 A/W, which is much better than traditional AlGaN-based devices without graded layer design.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Su-Sir Liu, Pei-Wen Li, W.H. Lan, Wen-Jen Lin,