Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10640033 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
In this paper, organic thin-film transistors (OTFTs) were fabricated on polyethersulfone (PES) and silicon (Si) substrates with top-contact geometry. Several kinds of metals with different work functions were used for source and drain electrodes, and optimum fabrication conditions were found. Photo cross-linkable polymeric gate dielectrics and thermal silicone oxide (SiO2) were used for the plastic and Si OTFTs, respectively. From the electrical measurements, typical I-V characteristics of the thin-film transistor (TFT) were observed. The field-effect mobility, μ, was obtained to be 2.59 cm2/(V s) from the flexible OTFT with polymeric gate dielectrics. Moreover, a possible critical work function of 4.3 eV for the electrode of pentacene OTFT with top-contact geometry.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Sang Chul Lim, Seong Hyun Kim, Jung Hun Lee, Han Young Yu, Yongsub Park, Dojin Kim, Taehyoung Zyung,