Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10640087 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
High quality SiO2 film was successfully deposited onto AlGaN as a dielectric layer for our AlGaN/GaN MOS-HFETs using the photochemical vapor deposition (photo-CVD) technique, with D2 lamp as the excitation source. By comparing with other conventional AlGaN/GaN HFETs with similar structures, it was found that the gate leakage current can be reduced by more than four orders of magnitude, even at elevated temperatures. With Vds = 20 V and Vgs = â8 V (cut-off region), the leakage current at room temperature was about 6.46 mA/mm, which is almost identical to that (6.48 mA/mm) of measured at 300 °C, and most of all, relatively larger Ids,max and gm,max could still be achieved when compared to conventional HFETs. In addition, the extrinsic cut-off frequencies fT's for both MOS-HFETs and HFETs were measured to be 4.05 GHz and 3.36 GHz, respectively. Furthermore, the corresponding fmax's for MOS-HFETs and HFETs were also found to be 6.85 GHz and 5.45 GHz, respectively.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
C.K. Wang, R.W. Chuang, S.J. Chang, Y.K. Su, S.C. Wei, T.K. Lin, T.K. Ko, Y.Z. Chiou, J.J. Tang,