| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10640106 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
Vanadium-doped CaBi4Ti4O15 (CBTVx, x = 0â0.2) bismuth layered structure ferroelectric (BLSF) ceramics were prepared by the solid-state reaction method. X-ray diffraction pattern showed that single phase of BLSF with m = 4 formed when x â¤Â 0.1. The sintering temperature of the CaBi4Ti4O15 ceramics was lowered by doping of vanadium. The effects of vanadium doping on the dielectric, ferroelectric and piezoelectric properties of CaBi4Ti4âxVx ceramics were investigated. V5+ dopant slightly increased the Curie temperature, enhanced the remnant polarization and decreased the coercive field of CBTVx ceramics. V5+ dopant decreased the temperature coefficient of dielectric constant and dielectric loss at high temperature. V5+-doped CaBi4Ti4O15 ceramics have superior piezoelectric properties. As a result, V5+-doped CBT ceramics are a promising candidate for high temperature piezoelectric applications.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Jiangtao Zeng, Yongxiang Li, Qunbao Yang, Qingrui Yin,