| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10640121 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
The effect of annealing temperature on the electrical properties of low voltage ZnO-based ceramic films was studied by a novel sol-gel process. The experiment results show that Zn7Sb2O12 and ZnCr2O4 phase can form in a lower annealing temperature (550 °C) by the solution doping, and the pyrochlore phase is not detected by X-ray diffractometer (XRD) from 550 °C to 950 °C. Sb2O3 phase can change to spinel phase completely; Bi2O3 and ZnO may be vaporized when the annealing temperature reaches 750 °C. The ZnO-based ceramic films with nonlinear coefficient of 20, nonlinear voltage of 5 V and the leakage current density of 0.5 μA/mm2 can be gained at the proper annealing temperature.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Shenglin Jiang, Haibo Zhang, Yanqiu Huang, Meidong Liu, Ruzhan Lin,