| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10640154 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
Indium selenide thin films have been deposited on glass, Si(1 0 0) and polycrystalline GaAs substrates from In[(SePiPr2)2N]2Cl precursor by aerosol-assisted (AA) and low-pressure (LP) metal-organic chemical vapor deposition (MOCVD). X-ray powder diffraction (XRPD) patterns of these films indicated the growth of hexagonal γ-In2Se3. The morphologies of films have been studied by scanning electron microscopy (SEM) and compositions have been determined by energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS).
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Authors
Mohammad Afzaal, David Crouch, Paul O'Brien,