CuInS2 films deposited by aerosol-assisted chemical vapor deposition using ternary single-source precursors

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (1 1 2) or (2 0 4/2 2 0) preferred orientation were obtained, and compositional analysis showed that (1 1 2)-oriented films contained more copper than (2 0 4/2 2 0)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (1 1 2)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (2 0 4/2 2 0)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (1 1 2)-oriented films were obtained with a maximum grain size of about 0.5 μm, and their X-ray diffraction did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 Ω cm and 30 Ω cm, and an optical band gap of 1.46 eV ± 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.