| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10640176 | Materials Science and Engineering: B | 2005 | 6 Pages |
Abstract
Deep level transient spectroscopy (DLTS) and photoluminescence (PL) techniques are used to study the defects present in InAlAs/InP layers grown by metal organic chemical vapor deposition (MOCVD). In DLTS technique, different reverse bias and different heights and widths of the filling pulse are applied to the samples; the measurements have revealed the presence of four defects labelled A-D, which are found to be in a good agreement with the results of the photoluminescence (PL) technique. In fact, a detailed study of the defect (D) by photoluminescence (PL) technique has led to the same results as those determined by DLTS.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S. Bouzgarrou, M.M. Ben Salem, F. Hassen, A. Kalboussi, A. Souifi,