Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10640200 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
Layer-structured Bi4Ti3âxNbxO12+x/2 (BiTN) ceramics, where x = 0.02-0.20, have been prepared by the conventional sintering technique. XRD results reveal the existence of an orthorhombic structure. The grain size decreases gradually and grain growth anisotropy is limited when x increases. The domain structures of BiTN ceramics differ on x. Nb5+ donor doping decreases markedly electrical conductivity of the materials and Tc shifts gradually to lower temperatures. In addition, low dielectric losses and good temperature stability of dielectric constant are obtained in a wide temperature range. Ferroelectric hysteresis loops of the materials are also determined on x. The best properties can be found in x = 0.08 and 0.11, indicating lower electrical conductivity, good temperature stability of dielectric properties and adequate piezoelectric properties.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Lina Zhang, Ruiqing Chu, Suchuan Zhao, Guorong Li, Qingrui Yin,